Invention Grant
- Patent Title: Method of forming a semiconductor device and structure therefor
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Application No.: US14508266Application Date: 2014-10-07
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Publication No.: US09960234B2Publication Date: 2018-05-01
- Inventor: Kirk Huang , Chun-Li Liu , Ali Salih
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/20 ; H01L27/06 ; H01L27/088
Abstract:
In one embodiment, a method of forming an MOS transistor includes forming a threshold voltage (Vth) of the MOS transistor to have a first value at interior portions of the MOS transistor and a second value at other locations within the MOS transistor that are distal from the interior portion wherein the second value is less than the first value.
Public/Granted literature
- US20160099314A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR Public/Granted day:2016-04-07
Information query
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