Invention Grant
- Patent Title: Air gap semiconductor structure with selective cap bilayer
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Application No.: US14960483Application Date: 2015-12-07
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Publication No.: US09960117B2Publication Date: 2018-05-01
- Inventor: Stephen M. Gates , Elbert E. Huang , Dimitri R. Kioussis , Christopher J. Penny , Deepika Priyadarshini
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Alexa L. Ashworth; A. Imtiaz Billah
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768 ; H01L21/311 ; H01L21/285 ; H01L21/288 ; H01L23/522
Abstract:
A semiconductor substrate including one or more conductors is provided. A first layer and a second layer are deposited on the top surface of the conductors. A dielectric cap layer is formed over the semiconductor substrate and air gaps are etched into the dielectric layer. The result is a bilayer cap air gap structure with effective electrical performance.
Public/Granted literature
- US20160133575A1 AIR GAP STRUCTURE WITH BILAYER SELECTIVE CAP Public/Granted day:2016-05-12
Information query
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