Invention Grant
- Patent Title: Continuous writing of pattern
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Application No.: US14994347Application Date: 2016-01-13
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Publication No.: US09960013B2Publication Date: 2018-05-01
- Inventor: Shih-Ming Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01L21/027 ; G03F7/20

Abstract:
The present disclosure provides one embodiment of a method that includes slicing a first sub-polygon out of the pattern layout and writing the first sub-polygon onto the substrate using a beam with a first beam setting that is associated with the first sub-polygon. The method additional includes slicing a second sub-polygon out of the remaining pattern layout that does not include the first sub-polygon. The second sub-polygon interfaces with the first sub-polygon on at least one edge. Also, the method includes, without turning off the beam after writing the first sub-polygon onto the substrate, writing the second sub-polygon onto the substrate with a second beam setting that is associated with the second sub-polygon.
Public/Granted literature
- US20170200584A1 Continuous Writing of Pattern Public/Granted day:2017-07-13
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