Invention Grant
- Patent Title: Electron beam irradiation device
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Application No.: US15251554Application Date: 2016-08-30
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Publication No.: US09960007B2Publication Date: 2018-05-01
- Inventor: Kazuto Matsuki , Ryoichi Susuki , Hiroyuki Kashiwagi , Takashi Sato
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2015-180089 20150911
- Main IPC: H01J37/073
- IPC: H01J37/073 ; H01J37/20

Abstract:
An electron beam irradiation device includes a stage, a main body unit, and a first mechanism. The main body unit includes a substrate, first members, and a first layer. The first members are arranged to be separated in a second direction intersecting a first direction and is provided at a first surface of the substrate opposing the stage. The first layer is provided between the stage and the first members and between the stage and the substrate. The first layer converts a light ray into an electron beam. The first mechanism is provided in the stage and moves the stage in the second direction. A distance of the movement is not less than a spacing between a center in the second direction of the first member and a center in the second direction of one other first member adjacent to the first member.
Public/Granted literature
- US20170076907A1 ELECTRON BEAM IRRADIATION DEVICE Public/Granted day:2017-03-16
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