Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14574884Application Date: 2014-12-18
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Publication No.: US09935617B2Publication Date: 2018-04-03
- Inventor: Takeshi Aoki , Munehiro Kozuma , Yoshiyuki Kurokawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2013-268613 20131226; JP2014-050958 20140314
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K3/012 ; H03K17/56 ; H03K19/173

Abstract:
A semiconductor device that can operate normally with lower power consumption is provided. The semiconductor device includes a pair of first circuits which each include a first transistor and a second transistor capable of controlling the supply of a first signal to a gate of the first transistor, and a second circuit which is capable of generating a second signal which is to be supplied to a gate of the second transistor and which has a larger amplitude than the first signal. One of a source and a drain of one of the first transistors included in the pair of first circuits is electrically connected to one of a source and a drain of the other of the first transistors. The first signals supplied to the gates of the first transistors in the pair of first circuits have potentials with different logic levels.
Public/Granted literature
- US20150188520A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-07-02
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