According to one embodiment, a magnetic memory device includes a first magnetic layer, a second magnetic layer, a third magnetic layer, and a first non-magnetic layer. The third magnetic layer is provided between a first part of the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the third magnetic layer. The first magnetic layer further includes a second part. At least a portion of the second part overlaps at least a portion of the third magnetic layer in a second direction orthogonal to a first direction from the first part toward the second magnetic layer.