Invention Grant
- Patent Title: Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device
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Application No.: US14994212Application Date: 2016-01-13
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Publication No.: US09935258B2Publication Date: 2018-04-03
- Inventor: Wei-Chuan Chen , Kangho Lee , Xiaochun Zhu , Seung H. Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Main IPC: H01L43/08
- IPC: H01L43/08 ; G11C11/15 ; G11C11/16 ; H01L43/02 ; H01L43/10 ; H01L43/12
Abstract:
Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.
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