In one example, a field effect transistor includes a fin. The fin includes a conducting channel formed from semiconductor-on-insulator and source/drain regions formed on opposite ends of the conducting channel, wherein the source/drain regions are formed from a material other than semiconductor-on-insulator. A gate is wrapped around the conducting channel, between the source/drain regions. In another example, a method for fabricating a field effect transistor includes forming a fin on a wafer. The fin includes a conducting channel formed from semiconductor-on-insulator and source/drain regions formed on opposite ends of the conducting channel, wherein the source/drain regions are formed from a material other than semiconductor-on-insulator. A gate is also formed between the source/drain regions and wraps around the conducting channel.