Invention Grant
- Patent Title: Manufacturing methods of thin film transistor having an ohmic contact region and array substrate including the same
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Application No.: US15038174Application Date: 2015-11-11
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Publication No.: US09935177B2Publication Date: 2018-04-03
- Inventor: Yueping Zuo , Liangjian Li
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg; Stanley N. Protigal
- Priority: CN201410841792 20141230
- International Application: PCT/CN2015/094280 WO 20151111
- International Announcement: WO2016/107290 WO 20160707
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/265 ; H01L21/266 ; H01L29/786

Abstract:
Embodiments of the present invention provide a thin film transistor and a manufacturing method thereof, an array substrate including the thin film transistor, and a manufacturing method of the array substrate. The thin film transistor comprises an active layer, a gate insulation layer, a gate, an interlayer insulation layer, a source and a drain formed on a base substrate, the interlayer insulation layer and the gate insulation layer are provided therein with through holes corresponding to the source and the drain; the active layer comprises a source ohmic contact region connected with the source, a drain ohmic contact region connected with the drain, a channel region serving as a channel located below the gate, and a lightly doped region between the drain ohmic contact region and the channel region.
Public/Granted literature
- US20160365430A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-12-15
Information query
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