Invention Grant
- Patent Title: Resistive memory cell structures and methods
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Application No.: US15196543Application Date: 2016-06-29
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Publication No.: US09935154B2Publication Date: 2018-04-03
- Inventor: Fabio Pellizzer , Ferdinando Bedeschi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00
Abstract:
Resistive memory cell structures and methods are described herein. One or more memory cell structures comprise a first resistive memory cell comprising a first resistance variable material and a second resistive memory cell comprising a second resistance variable material that is different than the first resistance variable material.
Public/Granted literature
- US20160307965A1 RESISTIVE MEMORY CELL STRUCTURES AND METHODS Public/Granted day:2016-10-20
Information query
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