A mark forming method includes: exposing a wafer with a mask image to form first and second resist marks that have different shapes than one another based on a portion of the mask image; applying a polymer layer that contains a block copolymer to the wafer by spin-coating; forming self-assembled regions in the applied polymer layer; selectively removing a portion of the self-assembled regions; and forming first and second wafer marks on the wafer using the first and second resist marks. This makes it possible to form the marks when forming circuit patterns using self-assembly of a block copolymer.