Invention Grant
- Patent Title: Electronic device and method for fabricating the same
-
Application No.: US15237356Application Date: 2016-08-15
-
Publication No.: US09935007B2Publication Date: 2018-04-03
- Inventor: Joo-Young Moon
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-Si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-Si
- Agency: Perkins Coie LLP
- Priority: KR10-2015-0166287 20151126
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L27/11502 ; H01L27/22 ; H01L27/24 ; H01L27/02 ; H01L27/108

Abstract:
A semiconductor device may include: a plurality of first contacts arranged at a predetermined distance in a first direction and a second direction crossing the first direction; a plurality of second contacts alternately arranged between the first contacts and arranged at a predetermined distance in the first direction and the second direction; a plurality of dog bone-type conductive lines connected to the second contacts arranged in the second direction, respectively, among the plurality of second contacts, and having concave parts and convex parts; and a plurality of etching prevention patterns formed over the plurality of conductive lines so as to overlap the conductive lines, respectively.
Public/Granted literature
- US20170154817A1 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-06-01
Information query
IPC分类: