Invention Grant
- Patent Title: Multilayer dielectric structures with graded composition for nano-scale semiconductor devices
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Application No.: US15152777Application Date: 2016-05-12
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Publication No.: US09934963B2Publication Date: 2018-04-03
- Inventor: Son V. Nguyen , Deepika Priyadarshini
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Steven Meyers
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L21/02 ; H01L23/532 ; H01L29/78 ; H01L23/48 ; H01L21/762 ; H01L21/768 ; H01L29/66
Abstract:
Multilayer dielectric structures are provided with graded composition. For example, a multilayer dielectric structure includes a stack of dielectric films, wherein the dielectric films include at least a first SiCNO (silicon carbon nitride oxide) film and a second SiCNO film. The first SiCNO film has a first composition profile of C, N, and O atoms. The second SiCNO film has a second composition profile of C, N, and O atoms, which is different from the first composition profile of C, N, and O atoms. The composition profiles of C, N and/or O atoms of the constituent dielectric films of the multilayer dielectric structure are customized to enhance or otherwise optimize one or more electrical and/or physical properties of the multilayer dielectric structure.
Public/Granted literature
- US20160314965A1 MULTILAYER DIELECTRIC STRUCTURES WITH GRADED COMPOSITION FOR NANO-SCALE SEMICONDUCTOR DEVICES Public/Granted day:2016-10-27
Information query
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