Invention Grant
- Patent Title: Methods for forming fin structures for semiconductor devices
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Application No.: US15334354Application Date: 2016-10-26
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Publication No.: US09934961B2Publication Date: 2018-04-03
- Inventor: Sheng-Chen Wang , Sai-Hooi Yeong , Tsung-Yao Wen , Yen-Ming Chen
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L21/8242
- IPC: H01L21/8242 ; H01L21/02 ; H01L21/762 ; H01L29/78 ; H01L29/66 ; H01L21/283 ; H01L21/3065 ; H01L29/06 ; H01L21/311
Abstract:
Structures and methods are provided for forming fin structures. A first fin structure is formed on a substrate. A shallow-trench-isolation structure is formed surrounding the first fin structure. At least part of the first fin structure is removed to form a cavity. A first material is formed on one or more side walls of the cavity. A second material is formed to fill the cavity, the second material being different from the first material. At least part of the STI structure is removed to form a second fin structure including the first material and the second material. At least part of the first material that surrounds the second material is removed to fabricate semiconductor devices.
Public/Granted literature
- US20170047222A1 Structures and Methods for Forming Fin Structures Public/Granted day:2017-02-16
Information query
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