Invention Grant
- Patent Title: Node retainer circuit incorporating RRAM
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Application No.: US15013123Application Date: 2016-02-02
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Publication No.: US09934855B2Publication Date: 2018-04-03
- Inventor: Mehdi Asnaashari , Hagop Nazarian
- Applicant: Crossbar, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: CROSSBAR, INC.
- Current Assignee: CROSSBAR, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Amin, Turocy & Watson, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C14/00

Abstract:
A retainer node circuit is provided that can retain state information of a volatile circuit element (e.g., a flip-flop, latch, switch, register, etc.) of an electronic device for planned or unplanned power-down events. The retainer node circuit can include a resistive-switching memory cell that is nonvolatile, having very fast read and write performance. Coupled with power management circuitry, the retainer node circuit can be activated to receive and store a signal (e.g., bit) output by the volatile circuit element, and activated to output the stored signal. Various embodiments disclose non-volatile retention of state information for planned shut-down events as well as unplanned shut-down events. With read and write speeds in the tens of nanoseconds, sleep mode can be provided for volatile circuit elements between clock cycles of longer time-frame applications, enabling intermittent power-down events between active periods. This enables reduction in power without loss of activity for an electronic device.
Public/Granted literature
- US20160225442A1 NODE RETAINER CIRCUIT INCORPORATING RRAM Public/Granted day:2016-08-04
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