Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15481937Application Date: 2017-04-07
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Publication No.: US09934826B2Publication Date: 2018-04-03
- Inventor: Yoshiyuki Kurokawa
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2016-081092 20160414
- Main IPC: G11C5/06
- IPC: G11C5/06 ; H01L29/786 ; H01L27/12 ; G06N3/08

Abstract:
To provide a semiconductor device including a first memory cell for holding first analog data, a second memory cell for holding reference analog data, and an offset circuit. The first memory cell and the second memory cell supply a first current and a second current, respectively, when a reference potential is supplied. The offset circuit supplies a third current corresponding to a differential current between the first current and the second current. The first memory and the second memory supply a fourth current and a fifth current, respectively, when a potential corresponding to second analog data is supplied. By subtracting the third current from a differential current between the fourth current and the fifth current, a current that depends on the sum of products of the first analog data and the second analog data is obtained. By providing a plurality of product-sum operation circuits that can be freely connected, a hierarchical neural network can be formed.
Public/Granted literature
- US20170301376A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-10-19
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