Invention Grant
- Patent Title: Film deposition apparatus, film deposition method, and computer-readable recording medium
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Application No.: US13467324Application Date: 2012-05-09
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Publication No.: US09932674B2Publication Date: 2018-04-03
- Inventor: Hitoshi Kato , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
- Applicant: Hitoshi Kato , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2011-107350 20110512; JP2011-198396 20110912
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/306 ; C23C16/54 ; H01J37/32 ; C23C16/455

Abstract:
A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.
Public/Granted literature
- US20130149467A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE RECORDING MEDIUM Public/Granted day:2013-06-13
Information query
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