Invention Grant
- Patent Title: Self aligned trench MOSFET with integrated diode
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Application No.: US14635988Application Date: 2015-03-02
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Publication No.: US09911840B2Publication Date: 2018-03-06
- Inventor: Sik Lui , Anup Bhalla
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L21/768 ; H01L27/108 ; H01L29/66 ; H01L29/08 ; H01L29/40 ; H01L29/423 ; H01L29/78 ; H01L29/872 ; H01L27/06 ; H01L29/861 ; H01L29/10 ; H01L29/417 ; H01L29/45 ; H01L29/47
Abstract:
A transistor device includes a doped semiconductor substrate having one or more electrically insulated gate electrodes formed in trenches in the substrate. One or more body regions are formed in a top portion of the substrate proximate each gate trench. One or more source regions are formed in a self-aligned fashion in a top portion of the body regions proximate each gate trench. One or more thick insulator portions are formed over the gate electrodes on a top surface of the substrate with spaces between adjacent thick insulator portions. A metal is formed on top of the substrate over the thick insulator portions. The metal forms a self-aligned contact to the substrate through the spaces between the thick insulator portions. An integrated diode is formed under the self-aligned contact.
Public/Granted literature
- US20150171201A1 SELF ALIGNED TRENCH MOSFET WITH INTEGRATED DIODE Public/Granted day:2015-06-18
Information query
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