Invention Grant
- Patent Title: Reducing leakage current in semiconductor devices
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Application No.: US14651012Application Date: 2013-12-11
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Publication No.: US09911813B2Publication Date: 2018-03-06
- Inventor: Bin Lu , Elison de Nazareth Matioli , Tomas Apostol Palacios
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Wolf, Greenfield & Sacks, P.C.
- International Application: PCT/US2013/074500 WO 20131211
- International Announcement: WO2014/093555 WO 20140619
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/267 ; H01L21/02 ; H01L21/306 ; H01L29/10 ; H01L29/06 ; H01L21/8258 ; H01L29/778 ; H01L29/20
Abstract:
A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.
Public/Granted literature
- US20160133710A9 REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES Public/Granted day:2016-05-12
Information query
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