Solid-state imaging apparatus

Invention Grant

US09911776B2 Solid-state imaging apparatus 有权

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Patent Title: Solid-state imaging apparatus
Application No.: US15495679

Application Date: 2017-04-24
Publication No.: US09911776B2

Publication Date: 2018-03-06
Inventor: Toshiaki Iwafuchi , Masahiko Shimizu , Hirotaka Kobayashi
Applicant: Sony Corporation
Applicant Address: JP Tokyo
Assignee: Sony Corporation
Current Assignee: Sony Corporation
Current Assignee Address: JP Tokyo
Agency: Sheridan Ross P.C.
Priority: JP2011-033690 20110218; JP2011-105241 20110510
Main IPC: H01L31/14
IPC: H01L31/14 ; G02B27/00 ; H01L27/146 ; G02B5/20

Abstract:

A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Public/Granted literature

US20170229506A1 SOLID-STATE IMAGING APPARATUS Public/Granted day:2017-08-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/12	.与如在一个共用衬底内或其上形成的，一个或多个电光源，如场致发光光源在结构上相连的，并与其电光源在电气上或光学上相耦合的（场致发光光源本身入H05B33/00）
H01L31/14	..由对辐射敏感的半导体器件控制的单光源或多光源，例如图像变换器、图像放大器、图像存储器件