According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a stacked body provided on the semiconductor substrate and including a plurality of electrode films being disposed to be separated from each other along a vertical direction, a first semiconductor member provided inside the stacked body and contacting the semiconductor substrate, a second semiconductor member provided on the first semiconductor member inside the stacked body, contacting the first semiconductor member and extending in the vertical direction, and an insulating film provided between the second semiconductor member and the electrode films. A configuration of a contact surface between the first semiconductor member and the second semiconductor member is convex downward.