Invention Grant
- Patent Title: Low temperature poly-silicon thin film transistor, fabricating method thereof, array substrate and display device
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Application No.: US15085217Application Date: 2016-03-30
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Publication No.: US09911618B2Publication Date: 2018-03-06
- Inventor: Xinghua Li , Junping Bao
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing CN Chengdu, Sichuan Province
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing CN Chengdu, Sichuan Province
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg
- Priority: CN201510223672 20150505
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/768 ; H01L21/308 ; H01L29/417 ; H01L29/66 ; H01L21/306

Abstract:
Embodiments of the present invention disclose a low temperature poly-silicon thin film transistor and a method of fabricating the same, an array substrate, and a display device. The low temperature poly-silicon thin film transistor comprises an active layer, a source and a drain, wherein the active layer comprises a source contact region, a drain contact region, and a channel region located between the source contact region and the drain contact region, the source is provided above and connected to the source contact region, the drain being provided above and connected to the drain contact region, and thicknesses of the source contact region and the drain contact region are both larger than that of the channel region.
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Information query
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