Invention Grant
- Patent Title: Embedded gallium-nitride in silicon
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Application No.: US15232860Application Date: 2016-08-10
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Publication No.: US09911602B2Publication Date: 2018-03-06
- Inventor: William J. Gallagher , Effendi Leobandung , Devendra K. Sadana , Ghavam G. Shahidi
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Michael O'Keefe
- Main IPC: H01L31/0256
- IPC: H01L31/0256 ; H01L21/02 ; H01L33/32 ; H01L21/762 ; H01L21/3065 ; H01L21/311 ; H01L33/00 ; H01L21/033 ; H01L21/4757 ; H01L33/20
Abstract:
A method and structure for integrating gallium nitride into a semiconductor substrate. The method may also include means for isolating the gallium nitride from the semiconductor substrate.
Public/Granted literature
- US20160351394A1 EMBEDDED GALLIUM-NITRIDE IN SILICON Public/Granted day:2016-12-01
Information query
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