Fabrication of semiconductor device using alternating high and low temperature layers

Invention Grant

US09911600B2 Fabrication of semiconductor device using alternating high and low temperature layers 有权

Patent Title: Fabrication of semiconductor device using alternating high and low temperature layers
Application No.: US14878136

Application Date: 2015-10-08
Publication No.: US09911600B2

Publication Date: 2018-03-06
Inventor: Paul Bridger , Robert Beach
Applicant: Infineon Technologies Americas Corp.
Applicant Address: US CA El Segundo
Assignee: INFINEON TECHNOLOGIES AMERICAS CORP.
Current Assignee: INFINEON TECHNOLOGIES AMERICAS CORP.
Current Assignee Address: US CA El Segundo
Agency: Murphy, Bilak & Homiller, PLLC
Main IPC: H01L21/02
IPC: H01L21/02 ; C30B25/02 ; C30B29/40 ; H01L33/04 ; C30B23/00 ; C30B23/06 ; C30B25/10 ; C30B25/16

Abstract:

A method for fabricating a III-nitride semiconductor body that includes high temperature and low temperature growth steps.

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理