Invention Grant
- Patent Title: Substrate processing apparatus, method of manufacturing semiconductor device, and baffle structure of the substrate processing apparatus
-
Application No.: US13306277Application Date: 2011-11-29
-
Publication No.: US09911580B2Publication Date: 2018-03-06
- Inventor: Hidehiro Yanai , Shin Hiyama , Toru Kakuda , Toshiya Shimada , Tomihiro Amano
- Applicant: Hidehiro Yanai , Shin Hiyama , Toru Kakuda , Toshiya Shimada , Tomihiro Amano
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2010-267073 20101130; JP2011-225617 20111013
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; B08B6/00 ; H01J37/32 ; G03F7/42 ; H01L21/311
Abstract:
A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.
Public/Granted literature
Information query
IPC分类:
