Invention Grant
- Patent Title: Writing multiple levels in a phase change memory using a write reference voltage that incrementally ramps over a write period
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Application No.: US14157605Application Date: 2014-01-17
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Publication No.: US09911492B2Publication Date: 2018-03-06
- Inventor: Chung H. Lam , Scott C. Lewis , Thomas M. Maffitt , Jack R. Morrish
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Steven Meyers; Andrew M. Calderon
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C11/56
Abstract:
Structures and methods for a multi-bit phase change memory are disclosed herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.
Public/Granted literature
- US20150206582A1 WRITING MULTIPLE LEVELS IN A PHASE CHANGE MEMORY Public/Granted day:2015-07-23
Information query
