The present technology relates to a solid-state imaging element, a driving method therefor, and an electronic apparatus, by which the characteristics of phase-difference pixels can be made constant irrespective of a chip position.In a pixel array section, a normal pixel including a photodiode (PD) that receives and photoelectrically converts incident light such that a color component signal is obtained, and a phase-difference pixel including a pair of a photodiode (PD1) and a photodiode (PD2) including light-receiving surfaces having a size depending on an image height such that a phase difference detection signal is obtained are arranged in a matrix form. The pair of the photodiode (PD1) and the photodiode (PD2) each include a first region serving as a charge accumulation main part and a second region that performs photoelectric conversion and contributes to charge transfer to the main part. The present technology is applicable to a CMOS image sensor, for example.