- Patent Title: Organic thin film transistor and a manufacturing method of the same
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Application No.: US14906017Application Date: 2015-12-31
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Publication No.: US09887374B2Publication Date: 2018-02-06
- Inventor: Hongyuan Xu , Changi Su
- Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agency: Ladas & Parry LLP
- Priority: CN201510802435 20151118
- International Application: PCT/CN2015/100234 WO 20151231
- International Announcement: WO2017/084187 WO 20170526
- Main IPC: H01L51/10
- IPC: H01L51/10 ; H01L27/32 ; H01L51/05 ; H01L51/00

Abstract:
An organic thin film transistor (OTFT) is disclosed herein. The OTFT has a substrate, a data line, a transfer pad, a source electrode, a drain electrode, an active pattern, a first insulating layer, a gate electrode, a second insulating layer, and a transparent electrode. The data line and the transfer pad are disposed on the substrate. The source electrode and the drain electrode are disposed on the substrate, the data line, and the transfer pad. The active pattern is disposed on the data line, the transfer pad, the substrate, the source electrode, and the drain electrode. With the disposition of the active pattern on the source electrode and the drain electrode, the source electrode and the drain electrode are free from the bombardment of the plasma.
Public/Granted literature
- US20170237028A1 ORGANIC THIN FILM TRANSISTOR AND A MANUFACTURING METHOD OF THE SAME Public/Granted day:2017-08-17
Information query
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