Invention Grant
- Patent Title: Thin film transistor, method of manufacturing the same, and electronic device including the thin film transistor
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Application No.: US14479845Application Date: 2014-09-08
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Publication No.: US09887373B2Publication Date: 2018-02-06
- Inventor: Ji Youl Lee , Joo Young Kim , Jong Won Chung , Sang Yoon Lee , Jeong Il Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0134389 20131106; KR10-2014-0076624 20140623
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L51/00

Abstract:
A thin film transistor includes a gate electrode and an organic semiconductor overlapping the gate electrode. A gate insulating layer is disposed between the gate electrode and the organic semiconductor. A source electrode and a drain electrode are disposed on and electrically connected to the organic semiconductor. A solvent selective photosensitive pattern is disposed on the organic semiconductor and between the source electrode and the drain electrode. An electronic device may include the thin film transistor.
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