Invention Grant
- Patent Title: Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
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Application No.: US15445156Application Date: 2017-02-28
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Publication No.: US09887270B2Publication Date: 2018-02-06
- Inventor: Masanobu Iwaya , Fumikazu Imai , Takuya Komatsu
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: Rabin & Berdo, P.C.
- Priority: JP2016-053132 20160316
- Main IPC: H01L29/45
- IPC: H01L29/45 ; H01L29/16 ; H01L29/66 ; H01L29/40 ; H01L21/02 ; H01L21/04 ; H01L29/78
Abstract:
A silicon carbide semiconductor device includes an n+-type SiC substrate, a gate oxide film formed on a portion of the surface of the n+-type SiC substrate, a gate electrode formed on the gate oxide film, an interlayer insulating film formed so as to cover the gate electrode, a TiN film formed so as to cover the interlayer insulating film, and a Ni silicide layer formed on a surface of the n+-type SiC substrate not covered by the interlayer insulating film. The TiN film has two or more layers.
Public/Granted literature
- US20170271468A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2017-09-21
Information query
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