Invention Grant
- Patent Title: Modulated super junction power MOSFET devices
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Application No.: US14659394Application Date: 2015-03-16
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Publication No.: US09887259B2Publication Date: 2018-02-06
- Inventor: Deva Pattanayak , Olof Tornblad
- Applicant: Vishay-Siliconix
- Applicant Address: US CA Santa Clara
- Assignee: Vishay-Siliconix
- Current Assignee: Vishay-Siliconix
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L29/10

Abstract:
A semiconductor device—e.g., a super junction power MOSFET—includes a number of columns of one type of dopant formed in a region of another type of dopant. Generally speaking, the columns are modulated in some manner. For example, the widths (e.g., diameters) of some columns are greater than the widths of other columns.
Public/Granted literature
- US20150372078A1 MODULATED SUPER JUNCTION POWER MOSFET DEVICES Public/Granted day:2015-12-24
Information query
IPC分类: