Invention Grant
- Patent Title: Semiconductor device for preventing field inversion
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Application No.: US15080641Application Date: 2016-03-25
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Publication No.: US09887187B2Publication Date: 2018-02-06
- Inventor: Shusaku Fujie
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2013-134001 20130626
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L27/02 ; H01L29/78 ; H01L23/482 ; H01L21/761 ; H01L27/088 ; H01L29/423 ; H01L29/08
Abstract:
A semiconductor device includes a semiconductor layer having an element formation region in which a semiconductor element is formed. An element isolation well is formed in a surface portion of the semiconductor layer to isolate the element formation region. A field insulating film is formed on a surface of the semiconductor layer. The field insulating film surrounds the element formation region in an annular shape when viewed from a top. An interlayer insulating film is formed on the semiconductor layer. A wiring is formed on the interlayer insulating film. A conductive film is formed on the field insulating film.
Public/Granted literature
- US20160211252A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-07-21
Information query
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