Invention Grant
- Patent Title: TFT switch and method for manufacturing the same
-
Application No.: US15491941Application Date: 2017-04-19
-
Publication No.: US09887141B2Publication Date: 2018-02-06
- Inventor: Peng Du , Cheng-hung Chen
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201310411135 20130910
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/66 ; H01L29/786 ; H01L29/66 ; H01L27/12

Abstract:
A thin-film transistor (TFT) switch includes a gate, a drain, a source, a semiconductor layer, and a fourth electrode. The drain is connected to a first signal. The gate is connected to a control signal to control the switch on or off. The source outputs the first signal when the switch turns on. The fourth electrode and the gate are respectively located at two sides of the semiconductor layer. The fourth electrode is conductive and is selectively coupled to different voltage levels, thereby reducing leakage current in a channel to improve switch characteristic when the switch turns off.
Public/Granted literature
- US20170222060A1 TFT SWITCH AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-08-03
Information query
IPC分类: