Invention Grant
- Patent Title: Method for forming semiconductor structure
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Application No.: US15616836Application Date: 2017-06-07
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Publication No.: US09887132B2Publication Date: 2018-02-06
- Inventor: Hung-Chih Yu , Chien-Mao Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L23/482
- IPC: H01L23/482 ; H01L23/532 ; H01L23/538 ; H01L23/528 ; H01L21/768 ; H01L21/764 ; H01L23/522 ; H01L23/00 ; H01L21/48

Abstract:
A semiconductor structure and a method for forming the semiconductor structure are provided. In various embodiments, the method for forming a semiconductor structure includes following steps. A structure on a semiconductor substrate is received, which the structure includes at least two conductive lines and a shorting bridge, and the conductive lines electrically connected to each other through the shorting bridge. The shorting bridge is insulated to make the conductive lines electrically isolated to each other.
Public/Granted literature
- US20170271206A1 METHOD FOR FORMING SEMICONDUCTOR STRUCTURE Public/Granted day:2017-09-21
Information query
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