Invention Grant
- Patent Title: Semiconductor device having a Pd-containing adhesion layer
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Application No.: US15111048Application Date: 2014-09-17
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Publication No.: US09887131B2Publication Date: 2018-02-06
- Inventor: Koichiro Nishizawa
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2014-066507 20140327
- International Application: PCT/JP2014/074567 WO 20140917
- International Announcement: WO2015/145815 WO 20151001
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L27/06 ; H01L29/45 ; C23C18/16 ; C23C28/00 ; C25D7/12 ; H01L21/768 ; C23C18/50 ; H01L23/532 ; H01L21/285 ; C23C18/32 ; C23C18/54 ; H01L21/8252 ; H01L23/522 ; H01L23/535
Abstract:
According to present invention, a semiconductor device includes a semiconductor substrate formed of GaAs, an adhesion layer formed of Pd or an alloy containing Pd on the semiconductor substrate, a barrier layer formed of Co or an alloy containing Co on the adhesion layer, and a metal layer formed of Cu, Ag or Au on the barrier layer.
Public/Granted literature
- US20160351442A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2016-12-01
Information query
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