Invention Grant
- Patent Title: Method of manufacturing a semiconductor device comprising field stop zone
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Application No.: US14297764Application Date: 2014-06-06
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Publication No.: US09887125B2Publication Date: 2018-02-06
- Inventor: Holger Schulze , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/268 ; H01L21/765 ; H01L21/324 ; H01L29/32 ; H01L29/66 ; H01L29/861 ; H01L29/739 ; H01L29/16 ; H01L29/20
Abstract:
A method of manufacturing a semiconductor device includes forming a field stop zone by irradiating a portion of a semiconductor body with a laser beam through a first surface of the semiconductor body. The portion has an oxygen concentration in a range of 5×1016 cm−3 and 5×1017 cm−3. Then the semiconductor body is irradiated with protons through the first surface and annealed in a temperature range of 300° C. to 550° C.
Public/Granted literature
- US20150357229A1 Method of Manufacturing a Semiconductor Device Comprising Field Stop Zone Public/Granted day:2015-12-10
Information query
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