Invention Grant
- Patent Title: Wafer processing method
-
Application No.: US14704605Application Date: 2015-05-05
-
Publication No.: US09887091B2Publication Date: 2018-02-06
- Inventor: Katsuhiko Suzuki
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain, Ltd.
- Priority: JP2014-099577 20140513
- Main IPC: H01B13/00
- IPC: H01B13/00 ; B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; H01L21/302 ; H01L21/461 ; H01L21/311 ; H01L21/304 ; H01L21/02 ; H01L23/544 ; B24B1/00 ; H01L41/338 ; H01L21/683 ; H01L21/78 ; H01L21/67 ; B24B19/02 ; B24B7/22

Abstract:
A method of processing a wafer includes: a grinding step of grinding a back surface of the wafer to form, on the back side of the wafer, a recess corresponding to a device region and an annular projecting portion corresponding to a peripheral marginal region; and a splitting groove forming step of forming, after the grinding step is conducted, a splitting groove for splitting the device region and the peripheral marginal region from each other at the boundary between the recess and the annular projecting portion, the splitting groove extending from the front surface of the wafer to reach the back surface of the wafer. The splitting groove is formed by dry etching.
Public/Granted literature
- US20150332909A1 WAFER PROCESSING METHOD Public/Granted day:2015-11-19
Information query