Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
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Application No.: US15671381Application Date: 2017-08-08
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Publication No.: US09887070B2Publication Date: 2018-02-06
- Inventor: Takao Arase , Masahito Mori , Kenetsu Yokogawa , Yuusuke Takegawa , Takamasa Ichino
- Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Baker Botts L.L.P.
- Priority: JP2015-002723 20150109; JP2015-200701 20151009
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01J37/32 ; H01L21/67 ; H01L21/683

Abstract:
To control temperature of a sample in plasma processing with high accuracy while securing an electrostatic chucking force 5 without breakdown of an electrostatic chucking film. When radio-frequency power is time modulated, a high-voltage side Vpp detector detects a first voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to a sample stage in a first period of the time modulation having a 10 first amplitude. A low-voltage side Vpp detector detects a second voltage value which is a peak-to-peak voltage value of a radio-frequency voltage applied to the sample stage in a second period having a second amplitude smaller than the first amplitude. Then, an ESC power supply control unit controls output voltages from 15 ESC power supplies based on the first voltage value, the second voltage value and a duty ratio of the time modulation.
Public/Granted literature
- US20170338086A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2017-11-23
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