Invention Grant
- Patent Title: Ceramic ion source chamber
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Application No.: US15644896Application Date: 2017-07-10
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Publication No.: US09887060B2Publication Date: 2018-02-06
- Inventor: Craig R. Chaney , Neil J. Bassom
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Agency: Nields, Lemack & Frame, LLC
- Main IPC: H01J27/20
- IPC: H01J27/20 ; H01J27/02

Abstract:
The IHC ion source comprises an ion source chamber having a cathode and a repeller on opposite ends. The ion source chamber is constructed of a ceramic material having very low electrical conductivity. An electrically conductive liner may be inserted into the ion source chamber and may cover three sides of the ion source chamber. The liner may be electrically connected to the faceplate, which contains the extraction aperture. The electrical connections for the cathode and repeller pass through apertures in the ceramic material. In this way, the apertures may be made smaller than otherwise possible as there is no risk of arcing. In certain embodiments, the electrical connections are molded into the ion source chamber or are press fit in the apertures. Further, the ceramic material used for the ion source chamber is more durable and introduces less contaminants to the extracted ion beam.
Public/Granted literature
- US20170309434A1 Ceramic Ion Source Chamber Public/Granted day:2017-10-26
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