Invention Grant
- Patent Title: Printed circuit, thin film transistor and manufacturing method thereof
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Application No.: US15253841Application Date: 2016-08-31
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Publication No.: US09867273B2Publication Date: 2018-01-09
- Inventor: Yu-Hsuan Ho
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: Jianq Chyun IP Office
- Priority: CN201610220055 20160411
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H05K1/02 ; H05K1/09 ; H05K1/03 ; H05K3/12 ; H05K3/22 ; H01L29/786 ; H01L29/45 ; H01L21/288 ; H01L29/66 ; H01L21/02
Abstract:
A printed circuit, a thin film transistor and manufacturing methods thereof are provided. The printed circuit includes a plurality of metal nanostructures and a metal oxide layer. The metal oxide layer is disposed on a surface of the metal nanostructures and fills a space at an intersection of the metal nanostructures. The metal oxide layer disposed on the surface of the metal nanostructures has a thickness of 0.1 nm to 10 nm.
Public/Granted literature
- US20170295639A1 PRINTED CIRCUIT, THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-10-12
Information query
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