Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14848486Application Date: 2015-09-09
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Publication No.: US09865744B2Publication Date: 2018-01-09
- Inventor: Shunpei Yamazaki , Jun Koyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2010-012627 20100122
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L27/12 ; H01L29/04 ; H01L29/06 ; H01L29/10 ; H01L29/24 ; H01L29/45 ; H03K17/082
Abstract:
The semiconductor device includes a power element which is in an on state when voltage is not applied to a gate, a switching field-effect transistor for applying first voltage to the gate of the power element, and a switching field-effect transistor for applying voltage lower than the first voltage to the gate of the power element. The switching field-effect transistors have small off-state current.
Public/Granted literature
- US20160005874A1 Semiconductor Device Public/Granted day:2016-01-07
Information query
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