A Schottky barrier diode includes: an n+ type of silicon carbide substrate; an n− type of epitaxial layer formed on a first surface of the n+ type of silicon carbide substrate; a plurality of p+ regions formed inside the n− type of epitaxial layer; a Schottky electrode formed in an upper portion of the n− type of epitaxial layer of an electrode region; and an ohmic electrode formed on a second surface of the n+ type of silicon carbide substrate, wherein the plurality of p+ regions are formed to be spaced apart from each other at a predetermined interval within the n− type of epitaxial layer.