Invention Grant
- Patent Title: Silicon carbide semiconductor device
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Application No.: US15342023Application Date: 2016-11-02
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Publication No.: US09865591B2Publication Date: 2018-01-09
- Inventor: Nobuyuki Horikawa , Osamu Kusumoto , Masashi Hayashi , Masao Uchida
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-107107 20140523
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L27/06 ; H01L29/78 ; H01L27/04 ; H01L29/861 ; H01L29/868 ; H01L29/06 ; H01L29/12 ; H01L29/16 ; H01L29/41
Abstract:
A silicon carbide semiconductor device includes a transistor region, a diode region, a gate line region, and a gate pad region. The gate pad region and the gate line region are each disposed to be sandwiched between the diode region and the diode region, and a gate electrode on the gate pad region and the gate line region is formed on an insulating film formed on an epitaxial layer. Thus, breakdown of the insulating film in the gate region can be prevented without causing deterioration in quality of the gate insulating film, upon switching and avalanche breakdown.
Public/Granted literature
- US20170077087A1 SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2017-03-16
Information query
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