Invention Grant
- Patent Title: Etching method using plasma, and method of fabricating semiconductor device including the etching method
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Application No.: US15347331Application Date: 2016-11-09
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Publication No.: US09865474B2Publication Date: 2018-01-09
- Inventor: Gon-jun Kim , Vladimir Volynets , Sang-jin An , Hee-jeon Yang , Sangheon Lee , Sung-keun Cho , Xinglong Chen , In-ho Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; H01L21/311 ; H01J37/32 ; H01L21/02 ; H01L21/3065
Abstract:
An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.
Public/Granted literature
- US20170062235A1 ETCHING METHOD USING PLASMA, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE ETCHING METHOD Public/Granted day:2017-03-02
Information query
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