Invention Grant
- Patent Title: CMOS image sensor, pixel unit and control method thereof
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Application No.: US14889064Application Date: 2013-06-07
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Publication No.: US09756271B2Publication Date: 2017-09-05
- Inventor: Wenzhe Luo , Lin Wang , Li Wang
- Applicant: Brigates Microelectronics (Kunshan) Co., Ltd.
- Applicant Address: CN Jiangsu
- Assignee: BRIGATES MICROELECTRONICS (KUNSHAN) CO., LTD
- Current Assignee: BRIGATES MICROELECTRONICS (KUNSHAN) CO., LTD
- Current Assignee Address: CN Jiangsu
- Agency: Ohlandt, Greeley, Ruggiero & Perle, LLP
- Priority: CN201310183417 20130517
- International Application: PCT/CN2013/076909 WO 20130607
- International Announcement: WO2014/183311 WO 20141120
- Main IPC: H04N5/3745
- IPC: H04N5/3745

Abstract:
A CMOS image sensor, a pixel unit and a control method thereof are provided. The pixel unit includes: a photoelectric conversion unit, an isolation transistor, a storage unit and a reading unit, wherein a first terminal of the isolation transistor is connected to the photoelectric conversion unit, a second terminal of the isolation transistor is connected to the storage unit and the reading unit; and wherein the storage unit comprises a first switch unit, a second switch unit, a first storage capacitor, a second storage capacitor and a reset unit, the first switch unit is adapted for controlling the first storage capacitor to be charged or discharged, the second switch unit is connected to the second storage capacitor and is adapted for controlling the second storage capacitor to be charged or discharged. The pixel unit improves signal-to-noise ratio of image signals generated by the pixel unit.
Public/Granted literature
- US20160088251A1 CMOS IMAGE SENSOR, PIXEL UNIT AND CONTROL METHOD THEREOF Public/Granted day:2016-03-24
Information query
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