Invention Grant
- Patent Title: Multiplexer-memory cell circuit, layout thereof and method of manufacturing same
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Application No.: US15375284Application Date: 2016-12-12
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Publication No.: US09755651B2Publication Date: 2017-09-05
- Inventor: Cheng C. Wang
- Applicant: Flex Logix Technologies, Inc.
- Applicant Address: US CA Mountain View
- Assignee: Flex Logix Technologies, Inc.
- Current Assignee: Flex Logix Technologies, Inc.
- Current Assignee Address: US CA Mountain View
- Agent Neil A. Steinberg
- Main IPC: H03K19/173
- IPC: H03K19/173 ; H03K19/177

Abstract:
An integrated circuit includes a field programmable gate array including: (i) a plurality of memory cells (e.g., static memory cells) to store data, wherein each memory cell includes a first output, (ii) a multiplexer including inputs, an output and input selects, (iii) a plurality of poly-silicon conductors, each poly-silicon conductor is disposed in the substrate and connected to the first output of an associated memory cell, (iv) poly-silicon extensions, each poly-silicon extension is (a) connected to an associated poly-silicon conductor and (b) coupled to an associated input select of the multiplexer, wherein the poly-silicon extensions are disposed in the substrate and at least partially under a metal conductor in the field programmable gate array.
Public/Granted literature
- US20170093405A1 Multiplexer-Memory Cell Circuit, Layout Thereof and Method of Manufacturing Same Public/Granted day:2017-03-30
Information query
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