![Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)](/docs/US/2017-09-05/US09755111B2/abs.jpg.600x600.jpg)
- Patent Title: Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)
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Application No.: US14959420Application Date: 2015-12-04
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Publication No.: US09755111B2Publication Date: 2017-09-05
- Inventor: Kazutaka Terashima , Suzuka Nishimura , Muneyuki Hirai
- Applicant: NITTO OPTICAL CO., LTD. , SOLARTES Lab., LTD. , Yoko Terashima
- Applicant Address: JP Tokyo JP Kanagawa
- Assignee: NITTO OPTICAL CO., LTD.,SOLARTES Lab, LTD.
- Current Assignee: NITTO OPTICAL CO., LTD.,SOLARTES Lab, LTD.
- Current Assignee Address: JP Tokyo JP Kanagawa
- Agency: Maier & Maier, PLLC
- Priority: JP2013-118851 20130605
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01S5/34 ; H01S5/343 ; H01L33/06 ; H01S5/02 ; H01L33/12 ; H01L33/00
![Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)](/abs-image/US/2017/09/05/US09755111B2/abs.jpg.150x150.jpg)
Abstract:
A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blend-type BP layer formed on an Si substrate, an AlyInxGazN (y≧0, x>0) crystal as a mother crystal maintaining the zinc blend-type crystal structure and In dots having an In concentration higher than that of the AlyInxGazN (y≧0, x>0) crystal as the mother crystal.
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