Invention Grant
- Patent Title: Group III nitride semiconductor light-emitting device
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Application No.: US15255202Application Date: 2016-09-02
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Publication No.: US09755107B2Publication Date: 2017-09-05
- Inventor: Koji Okuno
- Applicant: TOYODA GOSEI CO., LTD.
- Applicant Address: JP Kiyosu-Shi, Aichi-Ken
- Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee Address: JP Kiyosu-Shi, Aichi-Ken
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2015-190740 20150929
- Main IPC: H01L33/14
- IPC: H01L33/14 ; H01L33/00 ; H01L33/44 ; H01L33/04 ; H01L33/32
Abstract:
The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission efficiency. The Group III nitride semiconductor light-emitting device includes a base layer, an n-type superlattice layer, a light-emitting layer, and a p-type cladding layer, each of the layers being made of Group III nitride semiconductor. An electron injection adjusting layer comprising a single AlxGa1-xN (0
Public/Granted literature
- US20170092807A1 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2017-03-30
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