Invention Grant
- Patent Title: Light emitting diode with improved light extraction efficiency
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Application No.: US14641221Application Date: 2015-03-06
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Publication No.: US09755106B2Publication Date: 2017-09-05
- Inventor: Jeong Hee Yang , Kyoung Wan Kim , Yeo Jin Yoon , Jae Moo Kim , Keum Ju Lee
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: Perkins Coie LLP
- Priority: KR10-2010-0077924 20100812
- Main IPC: B60Q1/56
- IPC: B60Q1/56 ; H01L33/08 ; H01L33/38 ; H01L33/46 ; H05B33/06 ; H01L33/10 ; H01L33/24 ; H01L33/20 ; H01L33/42 ; H01L33/00

Abstract:
Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.
Public/Granted literature
- US20150179879A1 LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY Public/Granted day:2015-06-25
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