Invention Grant
- Patent Title: Reducing dark current in germanium photodiodes by electrical over-stress
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Application No.: US15010910Application Date: 2016-01-29
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Publication No.: US09755100B2Publication Date: 2017-09-05
- Inventor: Barry P. Linder , Jason S. Orcutt
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L31/18
- IPC: H01L31/18
Abstract:
Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.
Public/Granted literature
- US20170222084A1 REDUCING DARK CURRENT IN GERMANIUM PHOTODIODES BY ELECTRICAL OVER-STRESS Public/Granted day:2017-08-03
Information query
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